MoSe2 and MoTe2 based mostly heterostructures, owing to their outstanding photoresponsivity and tunable electrical traits, have emerged as promising candidates for field-effect transistors (FETs) and near-infrared (NIR) optoelectronic functions. Nevertheless, the contributions of various interfacial processes impose limitations on the band tunability and provider dynamics of the heterostructure, posing challenges of their gadget engineering. On this work, we current the scalable, layer-by-layer progress of a trilayer MoSe2/MoTe2 heterostructure over a SiO2 substrate through molecular beam epitaxy (MBE). By leveraging the tunable probing depth of AR-XPS, we efficiently resolve the interfacial bonding modifications, resembling Te migration throughout the interface and localized Mo–Se–Te bonding. Our investigations present that these site-specific processes on the interface induce uneven vitality degree shifts, Fermi degree pinning, and modulation of the valence band edge. Consequently, deviations from predicted band alignment are noticed, with the Fermi degree pinned round 0.58 eV above the valence band edge on the MoTe2 aspect and the anomalous upshift of the valence band most of MoSe2 within the heterostructure. These interfacial results additionally lead to a decreased barrier for gap injection, which may enhance bidirectional provider transport and gate-tunable gap conduction in such heterostructure-based units. The findings spotlight the important function of interfacial interactions in governing band alignment of the ultrathin transition metallic dichalcogenide (TMDC) heterostructures, offering key insights for advancing nanoelectronic and optoelectronic units via heterostructure band engineering.
