Dipole-induced transition from Schottky to Ohmic contact at Janus MoSiGeN4/metallic interfaces

Janus MoSiGeN₄ monolayer displays distinctive mechanical stability and excessive electron mobility, which makes it a promising channel candidate for field-effect transistors (FETs). Nonetheless, the excessive Schottky barrier on the contact interface would restrict the provider injection effectivity and degrade the machine’s efficiency. Herein, utilizing density practical concept calculations and machine studying strategies, we investigated the interfacial properties of Janus MoSiGeN₄ monolayer and metallic electrode contacts. The outcomes demonstrated that the n-type/p-type Schottky and n-type Ohmic contacts will be realized in metallic/MoSiGeN₄ by altering the built-in electrical dipole orientation of MoSiGeN₄. Particularly, the contact sort of Cu/MoSiGeN₄ (Au/MoSiGeN₄) transfers from n-type Schottky (p-type Schottky) contact to n-type Ohmic (n-type Schottky) contact when the contact aspect of MoSiGeN₄ switches from Si-N to Ge-N. As well as, the Fermi stage pinning (FLP) impact of metallic/MoSiGeN₄ with Si-N aspect is weaker than that of metallic/MoSiGeN₄ with Ge-N aspect as a result of impact of intrinsic dipole and interface dipole. It highlights {that a} simplified mathematical expression ΔV/WM is developed to explain the Schottky barrier top in metallic/MoSiGeN₄ interfaces utilizing the machine studying technique. These findings supply invaluable steerage for the design and growth of high-performance Janus MoSiGeN₄-based digital gadgets.