Hybrid halide perovskites are engaging candidates for resistive switching reminiscences in neuromorphic computing purposes as a result of their combined ionic-electronic conductivity. Furthermore, their distinctive optoelectronic traits make them efficient as semiconductors in photovoltaics, opening views for self-powered reminiscence parts. These units, nevertheless, stay unexploited, which is expounded to the variability of their switching traits, weak endurance, and retention, which restrict their efficiency and sensible use. To handle this problem, we utilized low-dimensional perovskite capping layers onto 3D combined halide perovskites utilizing two perfluoroarene natural cations, particularly (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden–Popper and Dion–Jacobson 2D perovskite phases, respectively. The corresponding mixed-dimensional perovskite heterostructures have been used to manufacture resistive switching reminiscences primarily based on perovskite photo voltaic cell architectures, exhibiting that the units primarily based on perfluoroarene heterostructures exhibited enhanced efficiency and stability in inert and ambient air environment. This opens views for multidimensional perovskite supplies in sturdy self-powered reminiscence parts sooner or later.
