GaN high-electron-mobility-transistors (HEMTs) exhibit superior high-power and high-frequency traits; nevertheless, they generate a considerable quantity of warmth throughout operation. As quantum piezotronics gadgets, GaN HEMTs are of explicit curiosity because of their robust coupling processes between piezoelectric, electrical and thermal fields, that are nonetheless being explored. For the primary time, we constructed a theoretical framework combing piezotronics with the electrothermal mannequin to disclose the thermal spatial distribution and temporal evolution. Superior infrared thermography exhibit warmth supply is localized close to the gate in GaN HEMT, which matches our theoretical mannequin. The dynamic temperature traits point out that the substrate layer contributes to the principle thermal resistance and capacitance. Notably, by means of introducing exterior stress, piezoelectric polarization is usually a probe to domestically modulate thermal fields. A ten.1% lower in temperature-rise is realized in the course of the dynamic modulation course of, which additional confirmed accuracy of the mannequin. This work deepens understanding and cognition of piezoelectric-electric-thermal coupling processes and guides novel thermal administration technique in GaN HEMT gadget.
