We report an artificial protocol that yields hydrogen-terminated 2D silicon nanosheets with drastically lowered siloxane (e.g., Si-O-Si, OXSi) content material. These nanosheets displayed weak, broad photoluminescence centered close to 610 nm with an absolute photoluminescence quantum yield as little as 0.2%. Intentional oxidization of the nanosheets blueshifted the photoluminescence peak to 510 nm and elevated the quantum yield by greater than an order of magnitude to eight.5%. These outcomes present that managed oxidation modulates the bandgap of 2D silicon and that beforehand reported photoluminescence properties for this materials resulted, partly, from oxidation.
