On this work, we discover centered electron beam induced etching (FEBIE) of niobium skinny movies with the XeF2 precursor as a path to edit, on-the-fly, superconducting units. We report the impact of XeF2 strain, electron beam present, beam vitality, and dwell time on the Nb etch fee. To grasp the mass transport and response fee limiting mechanisms, we evaluate the relative electron and XeF2 gasoline flux and reveal the method is response fee restricted at low present/quick dwell instances, however shifts to mass transport restricted regimes as each are elevated. The electron stimulated etching yield is surprisingly excessive, as much as 3 Nb atoms/electron, and for the vary studied has a most at 1 keV. It was revealed that spontaneous etching accompanies the electron stimulated course of, which was confirmed by various the etched field dimension. An optimized etch decision of 17 nm was achieved. Provided that the Nb superconducting coherence size is 38 nm and scales with thickness, this work opens the chance to direct write Nb superconducting units by way of low-damage FEBIE.
