Answer-processed colloidal III–V semiconductor quantum dot photodiodes (QPDs) have potential functions in short-wavelength infrared (SWIR) imaging as a result of their tunable spectral response vary, potential multiple-exciton era, operation at 0-V bias voltage and low-cost fabrication and are additionally anticipated to interchange lead- and mercury-based counterparts which might be hampered by reliance on restricted parts (RoHS). Nevertheless, using III–V CQDs as photoactive layers in SWIR optoelectronic functions continues to be a problem due to underdeveloped ligand engineering for enhancing the in-plane conductivity of the QD assembled movies. Right here, we report on ligand engineering of InSb CQDs to boost the optical response efficiency of self-powered SWIR QPDs. Particularly, by changing the traditional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, resulting in improved provider mobility for top photoresponse pace to SWIR gentle. Moreover, using sulfide ligands resulted in a low darkish present density (∼nA cm−2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared picture sensors.
