Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T’-MoTe2/2H-MoTe2 heterojunction grown by chemical vapor deposition

This research explores the phase-controlled progress of few-layered 2H-MoTe₂, 1T’-MoTe₂, and 2H-/1T’-MoTe₂ heterostructures and their impacts on steel contact properties. Chilly-wall chemical vapor deposition (CW-CVD) with various progress charges of MoOx and response temperatures with Te vapors enabled the expansion of steady skinny movies of both 1T’-MoTe2 or 2H-MoTe2 phases on two-inch sapphire substrates. This technique facilitates the meticulous optimization of chemical vapor deposition (CVD) parameters, enabling the conclusion of phase-controlled progress of few-layered MoTe2 skinny movies and their subsequent heterostructures. The research additional investigates the affect of a 1T’-MoTe₂ intermediate layer on {the electrical} properties of steel contacts on few-layered 2H-MoTe₂. Bi-layer Ti/Al contacts straight deposited on 2H-MoTe₂ exhibited a Schottky habits, indicating inefficient service transport. Nonetheless, introducing a few-layered 1T’-MoTe2 intermediate layer between the steel and 2H-MoTe2 layers improved the contact traits considerably. The ensuing Al/Ti/1T’-MoTe₂/2H-MoTe₂ contact scheme demonstrates Ohmic habits with a particular contact resistance of round 1.7×10^-4 Ω-cm². This substantial enchancment is attributed to the excessive service focus of the 1T’-MoTe₂ intermediate layer, facilitating elevated tunneling occasions throughout the van der Waals hole and enhancing service transport between the steel and 2H-MoTe₂.