The event of scalable, low-power, and high-density resistive reminiscence gadgets is essential for next-generation computing architectures, notably in neuromorphic purposes. Right here, we report solution-processed SnO2/SnS2 bilayer skinny movies as useful layers for memristors and synaptic gadgets. The incorporation of the SnO2 layer permits the formation of oxygen-vacancy conductive filaments that act as digital electrodes, which successfully information the nucleation and rupture of sulfur-vacancy filaments within the two-dimensional (2D) SnS2 layer. This synergistic mechanism considerably enhances resistive switching efficiency, yielding an ON/OFF ratio exceeding 200, steady endurance over 10 4 cycles, and sturdy retention. Past standard reminiscence conduct, the bilayer gadgets emulate important synaptic features, together with excitatory postsynaptic present (EPSC), paired-pulse facilitation (PPF), and spike-timing dependent plasticity (STDP), and obtain ~93% inference accuracy in synthetic neural community duties.
