Van der Waals (vdW) heterojunction photodetectors exhibit excessive efficiency as a consequence of its high-quality interface, excessive design flexibility, and distinctive properties of two-dimensional (2D) supplies. Significantly, combining 2D semiconductors with technologically mature semiconductors provides a promising pathway towards high-performance photodetection. Herein, we report a high-performance self-driven photodetector based mostly on a vertical GeSe/Si vdW heterojunction, constructed utilizing high-quality GeSe single crystals grown by the chemical vapor transport technique. Benefiting from the type-II band alignment and the robust built-in electrical subject on the GeSe/Si interface. Because of this, the photodetector reveals a excessive responsivity of 29.8 A/W, a excessive EQE of 6959.7%, a excessive detectivity of two.1×1012 Jones, a quick rise/decay time of 8.5 μs/23.7 μs below 532 nm laser illumination at zero bias. As well as, the GeSe/Si vdW heterojunction photodetectors reveal steady broadband photoresponse and pronounced photovoltaic habits below visible-light illumination (405-604 nm). This work highlights some great benefits of integrating 2D GeSe with silicon through vdW heterojunction engineering and supplies a big technique for growing self-driven, high-performance photodetectors towards sensible optoelectronic purposes.
