Because the scaling of standard dynamic random-access reminiscence (DRAM) has reached its limits, 3D DRAM has been proposed as a next-generation DRAM cell structure. Nonetheless, incorporating silicon into 3D DRAM expertise faces numerous challenges in securing cost-effective excessive cell transistor efficiency. Subsequently, many analysis efforts are actively exploring the applying of next-generation semiconductor supplies, akin to transition oxide semiconductors (OSs) and steel dichalcogenides (TMDs), to handle the challenges and notice 3D DRAM. This overview offers an outline of the at the moment proposed buildings for 3D DRAM, compares the traits of OSs and TMDs, and discusses the feasibility of using the OSs and TMDs because the channel materials for 3D DRAM. Moreover, we overview current progress in implementing 3D DRAM utilizing the OSs, discussing their potential to beat challenges occurred in silicon-based approaches.
