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Tuesday, May 19, 2026

Attaining Neuronal Dynamics with Spike Encoding and Spatial-Temporal Summation in Vanadium-based Threshold Switching Memristor for Asynchronous Sign Integration


Synthetic neuronal gadgets that emulate the dynamics of organic neurons are pivotal for advancing mind emulation and creating bio-inspired digital methods. This paper presents the design and demonstration of a synthetic neuron circuit based mostly on a Pt/V/AlOx/Pt threshold switching memristor (TSM) built-in with an exterior resistor. By making use of voltage pulses, we efficiently exhibit the leaky integrate-and-fire (LIF) conduct, in addition to each spatial and spatiotemporal summation capabilities, attaining the asynchronous sign integration. Notably, the Pt/V/AlOx/Pt TSM demonstrates ultrafast switching speeds (on/off instances ~165 ns/310 ns) and noteworthy stability (endurance >10² cycles with cycle-to-cycle variations <2.5%). These attributes render the circuit extremely appropriate as a spike generator in neuromorphic computing functions. The Pt/V/AlOx/Pt TSM-based spike encoder can output present spikes at frequencies starting from roughly 200 kHz to 800 kHz. The modulation of output spike frequency is achievable by adjusting the exterior resistor and capacitor throughout the spike encoder circuit, offering appreciable operational flexibility. Moreover, the Pt/V/AlOx/Pt TSM boasts a decrease threshold voltage (Vth ~0.84V) in comparison with beforehand reported VOx-based TSMs, resulting in considerably diminished power consumption for spike technology (~2.75 nJ/spike).

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