Germanium nanowires could possibly be the constructing blocks of hole-spin qubit quantum computer systems. Selective space epitaxy permits the direct integration of Ge nanowires on a silicon chip whereas controlling the system design, density, and scalability. For this to change into a actuality, it’s important to know and management the preliminary levels of the epitaxy course of. On this work, we spotlight the significance of floor therapy within the reactor previous to progress to realize excessive crystal high quality and related Ge nanowire buildings. Particularly, we reveal that publicity to AsH3 through the high-temperature therapy enhances lateral progress of preliminary Ge islands and promotes quicker formation of steady Ge nanowires in trenches. The Kolmogorov-Johnson-Mehl-Avrami crystallization mannequin helps our clarification of Ge coalescence. These outcomes present important perception into the selective epitaxy of horizontal Ge nanowires on lattice-mismatched Si substrates, which might be translated to different materials programs.
